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FLL600IQ-2C L-Band High Power GaAs FET 2100 MHz to 2200 MHz
FLL600IQ-2C L-Band High Power GaAs FET 2100 MHz to 2200 MHz
FLL600IQ-2C L-Band High Power GaAs FET 2100 MHz to 2200 MHz

FLL600IQ-2C L-Band High Power GaAs FET 2100 MHz to 2200 MHz

$ 68.11

Availability: 20 in stock
  • All returns accepted: Returns Accepted
  • Return shipping will be paid by: Buyer
  • Model: FLL6001Q-2C
  • Item must be returned within: 30 Days
  • Refund will be given as: Money Back
  • MPN: FLL600IQ-2C
  • Condition: New
  • Brand: Unbranded

    Description

    Part No.  ：
    FLL6001Q-2C
    Description ：  L-Band High Power GaAs FET
    FEATURES
    • Push-Pull Configuration
    • High Power Output: 60W (Typ.)
    • High PAE: 51% (Typ.)
    • Broad Frequency Range: 2100 to 2200 MHz.
    • Suitable for class AB operation.
    DESCRIPTION
    The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that
    offers ease of matching, greater consistency and a broader bandwidth for high
    power L-band amplifiers. This product is targeted to reduce the size and
    complexity of highly linear, high power base station transmitting amplifiers.
    This new product is uniquely suited for use in W-CDMA and IMT 2000 base
    station amplifiers as it offers high gain, long term reliability and ease of use.
    APPLICATIONS
    • Solid State Base-Station Power Amplifier.
    • W-CDMA and IMT 2000 Communication Systems
    Maker：FUJITSU
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    Terms of sale
    All the products we are selling include factory warranty, don?t cover items that have been abused, burned and damaged in any form.
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